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| Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Pack VCES IXGH 12N100U1 IXGH 12N100AU1 IC25 VCE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 150 W Clamped inductive load, L = 300 mH TC = 25C Maximum Ratings 1000 1000 20 30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 W C C C V V V V TO-247AD G C (TAB) C E A A A A G = Gate E = Emitter C = Collector TAB = Collector Mounting torque with screw M3 1.13/10 Nm/lb.in. 6 300 g C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES IC = 3 mA, VGE = 0 V BVCES temperature coefficient VGE(th) IC = 500 mA, VGE = VGE VGE(th) temperature coefficient ICES VCE = 0.8, VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = 20 V IC = ICE90, VGE = 15 Min. 1000 Characteristic Values Typ. Max. V 0.072 %/K 5.5 -0.192 V %/K 300 5 100 mA mA nA V V Features * International standard packages JEDEC TO-247 * IGBT with antiparallel FRED in one package * HDMOSTM process * Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity * Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications * DC choppers * AC motor speed control * DC servo and robot drives * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * Easy to mount with one screw * Reduces assembly time and cost * Space savings (two devices in one package) 2.5 TJ = 25C TJ = 125C 12N100U1 12N100AU1 3.5 4.0 IXYS reserves the right to change limits, test conditions, and dimensions. 95596C (7/00) (c) 2000 IXYS All rights reserved 1-5 IXGH12N100U1 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies C oes Cres Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri E(on) td(off) tfi Eoff RthJC RthCK 0.25 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 mH 12N100U1 12N100AU1 12N100U1 12N100AU1 VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 mH 12N100U1 12N100AU1 12N100U1 12N100AU1 VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1MHz IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % 750 120 30 65 8 24 100 200 850 1000 800 1000 500 2.5 1.5 100 200 1.1 900 1250 950 3.5 2.2 3.0 700 90 20 45 pF pF pF nC nC nC ns ns ns ns ns mJ mJ ns ns mJ ns ns ns mJ mJ 1.25 K/W K/W Characteristic Values Min. Typ. Max. 6 10 S IXGH12N100AU1 TO-247 AD (IXGH) Outline Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 1.5 2.49 Reverse Diode (FRED) (T J = 25C, unless otherwise specified) Symbol Test Conditions VF IRM t rr RthJC IF =8A, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 540 V IF = 1 A, -di/dt = 50 A/ms, VR = 30 V Characteristic Values Min. Typ. Max. 2.75 V TJ = 125C TJ = 25C 6.5 120 50 60 A ns ns 2.5 K/W (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXGH12N100U1 50 TJ = 25C IXGH12N100AU1 100 VGE = 15V 13V 11V TJ = 25C VGE = 15V 40 80 IC - Amperes IC - Amperes 9V 13V 30 20 7V 60 11V 40 9V 10 0 0 2 4 6 8 10 20 7V 0 0 4 8 12 16 20 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics 50 TJ = 125C 1.6 VGE = 15V 13V 11V VGE = 15V IC = 24A VCE (sat) - Normalized 40 1.4 1.2 IC = 12A IC - Amperes 30 9V 20 7V 1.0 0.8 IC = 6A 10 0 0 2 4 6 8 10 0.6 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 50 VCE = 10V 1000 Ciss f = 1Mhz 40 30 TJ = 125C Capacitance - pF TJ = 25C IC - Amperes Coss 100 20 10 0 2 4 6 8 10 12 Crss 10 0 5 10 15 20 25 30 35 40 VGE - Volts VCE-Volts Figure 5. Admittance Curves Figure 6. Capacitance Curves (c) 2000 IXYS All rights reserved 3-5 IXGH12N100U1 1200 TJ = 125C IXGH12N100AU1 5 5 RG = 120 1000 t fi - nanoseconds t fi - nanoseconds 1100 t fi 4 800 tfi TJ = 125C IC = 12A 4 E(OFF) - milliJoules E(OFF) - millijoules 600 3 1000 E(OFF) 3 400 E(OFF) 2 900 2 200 1 800 0 5 10 15 1 20 0 0 30 60 90 120 0 150 IC - Amperes RG - Ohms Figure 7. Dependence of tfi and EOFF on IC. 100 Figure 8. Dependence of tfi and EOFF on RG. 15 12 IC = 30A VCE = 150V 24 IC - Amperes TJ = 125C VGE - Volts 10 9 6 3 0 0 15 30 45 60 75 RG = 4.7 dV/dt < 5V/ns 1 0.1 0 200 400 600 800 1000 Qg - nanocoulombs VCE - Volts Figure 9. Gate Charge Figure 10. Turn-off Safe Operating Area 1 D=0.5 D=0.2 D=0.1 ZthJC (K/W) 0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle 0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-5 IXGH12N100U1 IXGH12N100AU1 Fig. 12. Forward current versus voltage drop. Fig. 13. Recovery charge versus -diF/dt. Fig. 14. Peak reverse current versus -diF/dt. Fig. 15. Dynamic parameters versus junction temperature. Fig. 16. Reverse recovery time . versus -diF/dt Fig. 17. Forward voltage recovery and time versus -diF/dt. Fig. 18. Transient thermal impedance junction to case. (c) 2000 IXYS All rights reserved 5-5 |
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